Frequency degradation of SOI MOS device output conductance

An impact of frequency on capacitances of partially-depleted SOI MOSFETs

Tomaszewski, D.
Łukasik, L.
Zaręba, A.
Jakubowski, A.

January 2000

A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are partic...

Influence of device engineering on the analog and RF performances of SOI MOSFETs

Kilchytska, Valeriya
Flandre, Denis
Neve, Amaury
Vancaillie, Laurent
Levacq, David
Adriaensen, Stéphane
van Meer, H
De Meyer, K
Raynaud, C.
Dehan, Morin
Raskin, Jean-Pierre

January 2003

This work presents a systematic comparative study of the influence of various process options on the...

A New Concept in the Design of RF Circuits Using PD SOI MOSFET

Neda Pourdavoud
Arash Daghighi

January 2012

Recently, there has been a growing interest in using SOI MOSFET as the device dimension shrinks to n...

Frequency degradation of SOI MOS device output conductance

Lederer, Dimitri
Dehan, Morin
Vanhoenacker-Janvier, Danielle
Flandre, Denis
Raskin, Jean-Pierre
2003 IEEE International SOI Conference

January 2003

In this paper analyses about the Fully Depleted (FD), Body Tied (BT) or Dynamic Threshold (DT) devic...

High frequency degradation of body-contacted PD SOI MOSFET output conductance

Lederer, Dimitri
Flandre, Denis
Raskin, Jean-Pierre

January 2005

This paper analyses the frequency dependence of the output conductance (G(d)) of several partially d...

Dynamic threshold voltage MOS in partially depleted SOI technology: a wide frequency band analysis

Dehan, Morin
Raskin, Jean-Pierre

January 2005

This paper analyzes the frequency dependence of the gate transconductance (G(m)) and output conducta...

AC output conductance of SOI MOSFET's and impact on analog applications

Sinitsky, D.
Tu, R.
Liang, C.
Chan, M.
Bokor, J.
Hu, C.

January 1997

We report a frequency-dependent output conductance of partially depleted SOI MOSFET's. For high-freq...

0.25 µm Fully-Depleted SOI MOSFET's for RF mixed analog-digital circuits, including a comparison with Partially-Depleted devices for High Frequency noise parameters

Vanmackelberg, M.
Raynaud, Christine
Faynot, O.
Pelloie, J.-L.
Tabone, C.
Grouillet, A.
Martin, F.
Dambrine, Gilles
Picheta, L.
Mackowiak, E.
Llinares, P.
Sevenhans, J.
Compagne, E.
Fletcher, G.
Flandre, Denis
Dessard, Vincent
Vanhoenacker-Janvier, Danielle
Raskin, Jean-Pierre

January 2002

The purpose of this paper is to completely describe the low and high frequency performance including...

0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

Vanmackelberg, M
Raynaud, C.
Faynot, O.
Pelloie, JL
Tabone, C
Grouillet, A
Martin, F.
Dambrine, G.
Picheta, L.
Mackowiak, E
Llinares, P
Sevenhans, J
Compagne, E
Fletcher, G
Flandre, Denis
Dessard, V.
Vanhoenacker-Janvier, Danielle
Raskin, Jean-Pierre
1st European Workshop on Ultimate Integration of Silicon (ULIS 2000)

January 2002

The purpose of this paper is to completely describe the low and high frequency performance including...

Analogue and RF performances of Fully Depleted SOI MOSFET (invited paper)

Raskin, Jean-Pierre

January 2019

Performance of RF integrated circuit (IC) is directly linked to the analogue and high frequency char...

Characterization of body node in PD SOI MOSFETs using 4-port VNA measurements

Lederer, Dimitri
Raskin, Jean-Pierre
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

January 2006

Body-contacts (BC) partially depleted (PD) silicon-on-insulator (SOI) MOSFETs suffer from a loss of ...

Comparison of microwave performances for fully and partially depleted sub-quarter micron SOI MOSFET’s

Goffioul, Michael
Dambrine, Gilles
Vanhoenacker-Janvier, Danielle
Raskin, Jean-Pierre

January 2000

The high frequency performances including microwave noise parameters for sub-quarter micron fully-(F...

Frequency dispersion in partially depleted SOI MOSFET output resistance

Fung, Samuel K.H.
Wong, Man Kit
Chan, Mansun
Nguyen, Cuong T.
Ko, Ping K.

January 1996

The small signal characteristics in the frequency domain are investigated to quantify the impact of ...

Output-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits

A. Daghighi

September 2013

In this article, a novel concept is introduced to improve the radio frequency (RF) linearity of part...

Wideband characterization of SOI materials and devices

Raskin, Jean-Pierre
3rd Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Cirucits (EUROSOI 07)

January 2007

In the present paper, the interest of wideband characterization for the development of integrated te...

An impact of frequency on capacitances of partially-depleted SOI MOSFETs

Tomaszewski, D.
Łukasik, L.
Zaręba, A.
Jakubowski, A.

January 2000

A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are partic...

Influence of device engineering on the analog and RF performances of SOI MOSFETs

Kilchytska, Valeriya
Flandre, Denis
Neve, Amaury
Vancaillie, Laurent
Levacq, David
Adriaensen, Stéphane
van Meer, H
De Meyer, K
Raynaud, C.
Dehan, Morin
Raskin, Jean-Pierre

January 2003

This work presents a systematic comparative study of the influence of various process options on the...

A New Concept in the Design of RF Circuits Using PD SOI MOSFET

Neda Pourdavoud
Arash Daghighi

January 2012

Recently, there has been a growing interest in using SOI MOSFET as the device dimension shrinks to n...

Frequency degradation of SOI MOS device output conductance

Lederer, Dimitri
Dehan, Morin
Vanhoenacker-Janvier, Danielle
Flandre, Denis
Raskin, Jean-Pierre
2003 IEEE International SOI Conference

January 2003

In this paper analyses about the Fully Depleted (FD), Body Tied (BT) or Dynamic Threshold (DT) devic...

High frequency degradation of body-contacted PD SOI MOSFET output conductance

Lederer, Dimitri
Flandre, Denis
Raskin, Jean-Pierre

January 2005

This paper analyses the frequency dependence of the output conductance (G(d)) of several partially d...

Dynamic threshold voltage MOS in partially depleted SOI technology: a wide frequency band analysis

Dehan, Morin
Raskin, Jean-Pierre

January 2005

This paper analyzes the frequency dependence of the gate transconductance (G(m)) and output conducta...

AC output conductance of SOI MOSFET's and impact on analog applications

Sinitsky, D.
Tu, R.
Liang, C.
Chan, M.
Bokor, J.
Hu, C.

January 1997

We report a frequency-dependent output conductance of partially depleted SOI MOSFET's. For high-freq...

0.25 µm Fully-Depleted SOI MOSFET's for RF mixed analog-digital circuits, including a comparison with Partially-Depleted devices for High Frequency noise parameters

Vanmackelberg, M.
Raynaud, Christine
Faynot, O.
Pelloie, J.-L.
Tabone, C.
Grouillet, A.
Martin, F.
Dambrine, Gilles
Picheta, L.
Mackowiak, E.
Llinares, P.
Sevenhans, J.
Compagne, E.
Fletcher, G.
Flandre, Denis
Dessard, Vincent
Vanhoenacker-Janvier, Danielle
Raskin, Jean-Pierre

January 2002

The purpose of this paper is to completely describe the low and high frequency performance including...

0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

Vanmackelberg, M
Raynaud, C.
Faynot, O.
Pelloie, JL
Tabone, C
Grouillet, A
Martin, F.
Dambrine, G.
Picheta, L.
Mackowiak, E
Llinares, P
Sevenhans, J
Compagne, E
Fletcher, G
Flandre, Denis
Dessard, V.
Vanhoenacker-Janvier, Danielle
Raskin, Jean-Pierre
1st European Workshop on Ultimate Integration of Silicon (ULIS 2000)

January 2002

The purpose of this paper is to completely describe the low and high frequency performance including...

Analogue and RF performances of Fully Depleted SOI MOSFET (invited paper)

Raskin, Jean-Pierre

January 2019

Performance of RF integrated circuit (IC) is directly linked to the analogue and high frequency char...

Characterization of body node in PD SOI MOSFETs using 4-port VNA measurements

Lederer, Dimitri
Raskin, Jean-Pierre
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

January 2006

Body-contacts (BC) partially depleted (PD) silicon-on-insulator (SOI) MOSFETs suffer from a loss of ...

Comparison of microwave performances for fully and partially depleted sub-quarter micron SOI MOSFET’s

Goffioul, Michael
Dambrine, Gilles
Vanhoenacker-Janvier, Danielle
Raskin, Jean-Pierre

January 2000

The high frequency performances including microwave noise parameters for sub-quarter micron fully-(F...

Frequency dispersion in partially depleted SOI MOSFET output resistance

Fung, Samuel K.H.
Wong, Man Kit
Chan, Mansun
Nguyen, Cuong T.
Ko, Ping K.

January 1996

The small signal characteristics in the frequency domain are investigated to quantify the impact of ...

Output-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits

A. Daghighi

September 2013

In this article, a novel concept is introduced to improve the radio frequency (RF) linearity of part...

Wideband characterization of SOI materials and devices

Raskin, Jean-Pierre
3rd Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Cirucits (EUROSOI 07)

January 2007

In the present paper, the interest of wideband characterization for the development of integrated te...

An impact of frequency on capacitances of partially-depleted SOI MOSFETs

Tomaszewski, D.
Łukasik, L.
Zaręba, A.
Jakubowski, A.

January 2000

A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are partic...

Influence of device engineering on the analog and RF performances of SOI MOSFETs

Kilchytska, Valeriya
Flandre, Denis
Neve, Amaury
Vancaillie, Laurent
Levacq, David
Adriaensen, Stéphane
van Meer, H
De Meyer, K
Raynaud, C.
Dehan, Morin
Raskin, Jean-Pierre

January 2003

This work presents a systematic comparative study of the influence of various process options on the...

A New Concept in the Design of RF Circuits Using PD SOI MOSFET

Neda Pourdavoud
Arash Daghighi

January 2012

Recently, there has been a growing interest in using SOI MOSFET as the device dimension shrinks to n...

Frequency degradation of SOI MOS device output conductance

Abstract

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Frequency degradation of SOI MOS device output conductance

Abstract

Extracted data

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