Add to ORKGA review of the principal features of ion implanted transistors is presented. A detailed analysis of the threshold voltage shift is given, with emphasis directed towards dose and energy effects. Analytical expressions are derived for enhancement mode devices and compared with numerical solutions; the effect of the implantation on subthreshold currents is described. Some aspects of depletion mode transistors are treated.Anglai
The effect of ionizing radiation on the output conductance of a short-channel MOS transistor is exam...
International audienceThe effect of dose on MOS transistors is investigated for irradiation performe...
NMOS processes require a variety of threshold voltages for differing applications. For this experime...
The effects of implantation on threshold voltage for a p-type substrate are reviewed. The I-V charac...
A closed-form analytical expression is derived to predict the threshold voltage of an ion-implanted ...
A shift of the threshold voltage (V th ) in high voltage metal-oxide-semiconductor field effect tran...
A new approach to model the radiation-induced threshold voltage shift in fully-depleted SOI MOSFET i...
Total ionizing dose effects are predominan...
The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported syst...
With the replacement of traditional polysilicon and silicon dioxide by metal gates and high-k dielec...
This paper reports on the threshold adjustment of NMOS transistors by arsenic ion implantation in th...
\u3cp\u3eWe have characterised the effects of ion implantation in advanced MOSFETs, and have shown t...
A test chip has been designed for experimental use in determining and maintaing the operation of an ...
ABSTRACT: The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID...
Ion implantation. followed by annealing process, often leads to nonuniform doping and considerable d...
The effect of ionizing radiation on the output conductance of a short-channel MOS transistor is exam...
International audienceThe effect of dose on MOS transistors is investigated for irradiation performe...
NMOS processes require a variety of threshold voltages for differing applications. For this experime...
The effects of implantation on threshold voltage for a p-type substrate are reviewed. The I-V charac...
A closed-form analytical expression is derived to predict the threshold voltage of an ion-implanted ...
A shift of the threshold voltage (V th ) in high voltage metal-oxide-semiconductor field effect tran...
A new approach to model the radiation-induced threshold voltage shift in fully-depleted SOI MOSFET i...
Total ionizing dose effects are predominan...
The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported syst...
With the replacement of traditional polysilicon and silicon dioxide by metal gates and high-k dielec...
This paper reports on the threshold adjustment of NMOS transistors by arsenic ion implantation in th...
\u3cp\u3eWe have characterised the effects of ion implantation in advanced MOSFETs, and have shown t...
A test chip has been designed for experimental use in determining and maintaing the operation of an ...
ABSTRACT: The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID...
Ion implantation. followed by annealing process, often leads to nonuniform doping and considerable d...
The effect of ionizing radiation on the output conductance of a short-channel MOS transistor is exam...
International audienceThe effect of dose on MOS transistors is investigated for irradiation performe...
NMOS processes require a variety of threshold voltages for differing applications. For this experime...