A Zero Temperature Coefficient characteristic is presented and characterized for the first time for current gain cutoff frequency and maximum oscillation frequency of different MOSFET structures. The benefits of these points on the design of RF circuits are of first importance especially for harsh environment applications and high density RF circuits
The design options for low-voltage low-power (LVLP) applications are not limited to the circuit leve...
The design options for low-voltage low-power (LVLP) applications are not limited to the circuit leve...
Abstract—The temperature dependence of high-frequency noise characteristics for deep-submicrometer b...
A Zero Temperature Coefficient characteristic is presented and characterized for the first time for ...
A Zero Temperature Coefficient characteristic is presented and characterized for the first time for ...
At zero-temperature-coefficient bias points, transistors are known to have stable DC performance wit...
The gate characteristics (ID-VGS) of fully depleted, lightly doped, enhanced SOI n-MOSFET are simula...
94 p.The dissertation studied temperature dependence of DC and RF characteristics in 0.18um MOSFETs....
Performance of RF integrated circuit (IC) is directly linked to the analogue and high frequency char...
This paper presents the influence of the drain bias and gate length of partially depleted SOI MOSFET...
This work investigates the possibility to tune the zero-temperature-coefficient (ZTC) points in part...
This paper presents a new approach to optimize the RF performance at high temperatures for low power...
In this work, the effect of rise in temperature from 25 ∘ C to 175 ∘ C on the performance of 22-nm f...
The design options for low-voltage low-power (LVLP) applications are not limited to the circuit leve...
The design options for low-voltage low-power (LVLP) applications are not limited to the circuit leve...
The design options for low-voltage low-power (LVLP) applications are not limited to the circuit leve...
The design options for low-voltage low-power (LVLP) applications are not limited to the circuit leve...
Abstract—The temperature dependence of high-frequency noise characteristics for deep-submicrometer b...
A Zero Temperature Coefficient characteristic is presented and characterized for the first time for ...
A Zero Temperature Coefficient characteristic is presented and characterized for the first time for ...
At zero-temperature-coefficient bias points, transistors are known to have stable DC performance wit...
The gate characteristics (ID-VGS) of fully depleted, lightly doped, enhanced SOI n-MOSFET are simula...
94 p.The dissertation studied temperature dependence of DC and RF characteristics in 0.18um MOSFETs....
Performance of RF integrated circuit (IC) is directly linked to the analogue and high frequency char...
This paper presents the influence of the drain bias and gate length of partially depleted SOI MOSFET...
This work investigates the possibility to tune the zero-temperature-coefficient (ZTC) points in part...
This paper presents a new approach to optimize the RF performance at high temperatures for low power...
In this work, the effect of rise in temperature from 25 ∘ C to 175 ∘ C on the performance of 22-nm f...
The design options for low-voltage low-power (LVLP) applications are not limited to the circuit leve...
The design options for low-voltage low-power (LVLP) applications are not limited to the circuit leve...
The design options for low-voltage low-power (LVLP) applications are not limited to the circuit leve...
The design options for low-voltage low-power (LVLP) applications are not limited to the circuit leve...
Abstract—The temperature dependence of high-frequency noise characteristics for deep-submicrometer b...