Special features of the back-gate effects in ultra-thin body SOI MOSFETs

Ultra-thin body silicon-on-insulator (SOI) MOSFET is considered to be a strong candidate for ultimate scaling of CMOS technologies, because of its excellent suppression of the short-channel effects, even without the use of channel doping. Apart from undoped ultra-thin silicon body, nowadays SOI MOSFETs also feature ultra-thin gate high-k gate dielectrics and thin buried oxides. These innovating features bring about special electrical properties. In this work, we describe some of these properties revealed via the back-gate effects, including special behaviors of interface coupling, transport properties and gate tunneling currents, which may be beneficial for the back-gate control schemes