High-temperature DC and RF behaviors of partially-depleted SOI MOSFET transistors

Emam, Mostafa
Tinoco, J.
Vanhoenacker-Janvier, Danielle
Raskin, Jean-Pierre
EUROSOI - 2008, Fourth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits

Open link

Publication date

January 2008

DOI

10.1016/j.sse.2008.06.058

Publisher

Elsevier BV

ISSN

0038-1101

Citation count (estimate)

Abstract

This work presents the high-temperature DC and RFbehaviorsofpartially-depletedSOI MOSFETs. DC and RF figures of merit are deeply investigated, both analytically and experimentally, to provide a complete study ofhigh-temperature performance and a comparison between floating-body and body-tied transistors. A highly stable RF performance is noticed especially for cutoff frequency and intrinsic elements for temperature as high as 250° C

Extracted data

We use cookies to provide a better user experience.

Data Protection

High-temperature DC and RF behaviors of partially-depleted SOI MOSFET transistors

Abstract

Extracted data

High-temperature DC and RF behaviors of partially-depleted SOI MOSFET transistors

Abstract

Extracted data

Related items

Related items