The hightemperature characteristics of devices and circuits realized in complementary metaloxidesemiconductor (CMOS) technology on silicon-on-insulator (SOI) substrates are compared with other materials, and it is demonstrated that CMOS on SOI is presently the most suitable process for the realization of electronic circuits operating at up to more than 300 °C
An effort to reduce the power consumption of the circuit, the supply voltage can be reduced leading ...
In this paper CMOS transistors with excellent channel mobilities and very low junction leakage will ...
International audienceSilicon On Insulator-based devices seem to be the best candidates for the ulti...
The high temperature characteristics of devices and circuits realized in complementary metal oxide s...
Silicon-on-Insulator (SOI) is the most commonly used technology for integrated circuits capable of o...
The electrical characteristics of devices and circuits realized in CMOS technology on silicon-on-ins...
Today an increasing number of applications in fields like power electronics or sensor signal conditi...
This work investigates and demonstrates the potential of Silicon-On-Insulator (SOI) MOSFETs for high...
Standard bulk CMOS technology targets operating temperatures of not more than 175°C. Silicon-on-insu...
Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator...
Silicon-on-Insulator (SOI) CMOS technology constitutes a good candidate for mixed signal RF CMOS app...
The silicon-on-insulator (SOI) CMOS technology is one of the best candidates for high-temperature ap...
Silicon-on-insulator (SOI) technology presents one way of fabricating semiconductor devices on an in...
Silicon-on-insulator (SOI) technology presents one way of fabricating semiconductor devices on an in...
This paper presents the latest results of our research on SOI (Silicon-On-Insulator) technology for ...
An effort to reduce the power consumption of the circuit, the supply voltage can be reduced leading ...
In this paper CMOS transistors with excellent channel mobilities and very low junction leakage will ...
International audienceSilicon On Insulator-based devices seem to be the best candidates for the ulti...
The high temperature characteristics of devices and circuits realized in complementary metal oxide s...
Silicon-on-Insulator (SOI) is the most commonly used technology for integrated circuits capable of o...
The electrical characteristics of devices and circuits realized in CMOS technology on silicon-on-ins...
Today an increasing number of applications in fields like power electronics or sensor signal conditi...
This work investigates and demonstrates the potential of Silicon-On-Insulator (SOI) MOSFETs for high...
Standard bulk CMOS technology targets operating temperatures of not more than 175°C. Silicon-on-insu...
Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator...
Silicon-on-Insulator (SOI) CMOS technology constitutes a good candidate for mixed signal RF CMOS app...
The silicon-on-insulator (SOI) CMOS technology is one of the best candidates for high-temperature ap...
Silicon-on-insulator (SOI) technology presents one way of fabricating semiconductor devices on an in...
Silicon-on-insulator (SOI) technology presents one way of fabricating semiconductor devices on an in...
This paper presents the latest results of our research on SOI (Silicon-On-Insulator) technology for ...
An effort to reduce the power consumption of the circuit, the supply voltage can be reduced leading ...
In this paper CMOS transistors with excellent channel mobilities and very low junction leakage will ...
International audienceSilicon On Insulator-based devices seem to be the best candidates for the ulti...
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