A comparative study of non-linearities in bulk and SOI linear resistors based on 2- and 4-transistor structures
- Gentinne, Bernard
- Dessard, Vincent
- Louveaux, S.
- Flandre, Denis
- Colinge, Jean-Pierre
- IEEE International SOI Conference, 1995
Publication date
January 1995
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Both measurements and simulations based on accurate current models prove that the use of a SOI 4-transistor balanced structure as a passive triode resistor for continuous time MOSFET-C filters or integrators can give a linearity improvement of up to 20 dB over bulk counterpart
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