Substrate effects on the small-signal characteristics of SOI MOSFET's
- Kilchytska, Valeriya
- Levacq, David
- Lederer, Dimitri
- Raskin, Jean-Pierre
- Flandre, Denis
- 32nd European Solid-State Device Research Conference (ESSDERC 2002)
Publication date
January 2002
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
The present paper investigates the influence of the silicon substrate on the AC characteristics of fully-depleted (FD) and partially-depleted (PD) silicon-on-insulator (SOI) MOSFETs. For the first time it is shown that the presence of the substrate underneath the buried oxide results in two transitions (i.e. zero-pole doublets) in the output conductance vs frequency characteristics, depending on the space-charge conditions at the buried oxide-substrate interface. The paper discusses the analytical device modelling to include the influence of the substrate in CAD circuit simulations
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