Low temperature operation of graded-channel SOI nMOSFETs for analog applications
- Pavanello, Marcelo Antonio
- Der Agopian, P.G.
- Martino, Joao Antonio
- Flandre, Denis
- 5th European Workshop on Low Temperature Electronics (WOLTE 2002)
Publication date
January 2002
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
We present in this work is an analysis of the low temperature operation of Graded-Channel fully-depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications. This analysis is supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations and measurements. The Graded-Channel transistor presents higher Early voltage and transconductance at 100 K if compared to the conventional fullydepleted SOI nMOSFET
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