Peculiarities of the temperature behaviour of SOI MOSFET's in the deep submicron area
- Vancaillie, Laurent
- Kilchytska, Valeriya
- Delatte, Pierre
- Demeûs, Laurent
- Matsuhashi, H.
- Ichikawa, F.
- Flandre, Denis
- 2003 IEEE International SOI Conference
Publication date
January 2003
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In this paper, the temperature dependence of transistor fabricated in a thin film deep submicron SOI MOSFET fully depleted process, junction leakage current and transconductance were evaluated
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