High-Temperature Behavior of fully-Depleted SOI MOSFETS in Case of Charge Instability of Buried Oxide

Operation of fully depleted inversion mode SOI n-MOSFET, fabricated on UNIBOND wafers, in wide range of temperatures (25-320°C), was investigated. Observed kink in the IdVfg characteristics and unusual behavior of IdVd characteristics in case of the back-gate bias changing from negative to positive values was explained by model of positive charge (protons) generation at the substrate/BOX interface during negative back-gate bias applying, and fast ion drift towards the BOX/Si film interface at zero or positive back-gate bias, with the subsequent neutralization of this charge by electrons from back channel ofMOSFET. The neutralization can be driven by the front-gate voltage because of the charge coupling effect