Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit
- Kilchytska, Valeriya
- Md Arshad, Mohd Khairuddin
- Makovejev, Sergej
- Olsen, S.
- Andrieu, F.
- Poiroux, T.
- Faynot, O.
- Raskin, Jean-Pierre
- EUROSOI 2011 Thematic Network on Silicon on Insulator Technology Confererence N°7
DOIAbstract
In this paper, we analyze, for the first time to our best knowledge, the perspectives of ultra-thin body and ultra-thin BOX (UTBB) SOI CMOS technology for analog applications. We show that UTBB is a promising contender for analog applications, exhibiting high maximum transconductance, drive current, intrinsic gain and achievable cut-off frequencies in the range of 150-220 GHz. Effect of operation regime, substrate bias, channel width and high temperature (up to 250 °C) on analog figures-of-merit (FoM) are analyzed. Benchmarking of UTBB with other technologies (as planar FD SOI, different FinFETs, UTB with thick BOX) is presented
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