Add to ORKGThe performances of accumulation-mode and inversion-mode Multigate FETs are compared. Both simulation and experimental data are presented. Accumulation-mode devices have a higher current drive and less process variability than inversion-mode FETs
There exists a well established model for the subthreshold slope of enhancement-mode MOSFETs. Indeed...
An analytical model for the subthreshold slope of the accumulation-mode p-channeI SOI MOSFET is deve...
We investigate the performance of thin-film accumulation mode (AM) SOI MOSFETs for ultrashort channe...
The performances of accumulation-mode and inversion mode Multigate FETs in ultra scaled devices are ...
The behavior of single and double gate accumulation mode silicon-on-insulator (SOI) metal oxide semi...
The behavior of single (SG) and double gate (DG) Accumulation Mode (AM) SOI MOSFETs is thoroughly in...
In this work, we analyze the conduction mechanisms and the electrical performance of intrinsic and d...
The performances of accumulation-mode and inversion-mode multigate FETs are compared. The influence ...
The minimum energy of the first conduction subband varies with gate voltage in trigate SOI MOSFETs i...
Novel devices such as Double Gate (DG), Triple Gate (TG) or FinFET, Pi-Gate (PG) and Omega-Gate SOI ...
Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), ...
Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), ...
Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), ...
Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), ...
Abstract—The operation of 1–3 nm thick SOI MOSFETs, in double-gate (DG) mode and single-gate (SG) mo...
There exists a well established model for the subthreshold slope of enhancement-mode MOSFETs. Indeed...
An analytical model for the subthreshold slope of the accumulation-mode p-channeI SOI MOSFET is deve...
We investigate the performance of thin-film accumulation mode (AM) SOI MOSFETs for ultrashort channe...
The performances of accumulation-mode and inversion mode Multigate FETs in ultra scaled devices are ...
The behavior of single and double gate accumulation mode silicon-on-insulator (SOI) metal oxide semi...
The behavior of single (SG) and double gate (DG) Accumulation Mode (AM) SOI MOSFETs is thoroughly in...
In this work, we analyze the conduction mechanisms and the electrical performance of intrinsic and d...
The performances of accumulation-mode and inversion-mode multigate FETs are compared. The influence ...
The minimum energy of the first conduction subband varies with gate voltage in trigate SOI MOSFETs i...
Novel devices such as Double Gate (DG), Triple Gate (TG) or FinFET, Pi-Gate (PG) and Omega-Gate SOI ...
Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), ...
Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), ...
Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), ...
Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), ...
Abstract—The operation of 1–3 nm thick SOI MOSFETs, in double-gate (DG) mode and single-gate (SG) mo...
There exists a well established model for the subthreshold slope of enhancement-mode MOSFETs. Indeed...
An analytical model for the subthreshold slope of the accumulation-mode p-channeI SOI MOSFET is deve...
We investigate the performance of thin-film accumulation mode (AM) SOI MOSFETs for ultrashort channe...