Accurate SOI MOSFET Characterization at Microwave Frequencies

The maturation of low cost SOI MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigourous in situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non--quasi--static small--signal model for MOSFET's. The extracted model is shown to be valid up to 40 GHz