Direct extraction method of SOI MOSFET transistor's parameters
- Raskin, Jean-Pierre
- Gillon, Renaud
- Vanhoenacker-Janvier, Danielle
- Colinge, Jean-Pierre
- International Conference on Microelectronic Test Structures, ICMTS 1996.
Publication date
January 1996
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
An extraction method for small-signal model parameters of Silicon-on-Insulator (SOI) MOS transistors is presented. This technique allows to obtain the intrinsic and extrinsic parameter values for a high frequency small-signal model directly from scattering parameter measurements. Only two sets of measured S-parameters are required, one set in the zero-bias condition at relatively high frequency to obtain values of series parasitic elements (RG, RD and R S) and the other in the frequency band and the bias conditions of interest to determine the parallel elements of the equivalent circuit
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