Add to ORKGA new concept of nanoscale MOSFET, the Variable-Barrier Resonant Tunneling Transistor, is presented and modeled using 3D Non-Equilibrium Green Function simulations. Owing to the presence of variable tunnel barrier(s) designed to be at the onset of resonant tunneling regime, we predict steep subthreshold slope as steep as 45mV/dec, together with high on-current and high Ion/Ioff current ratios in Si nanowire transistors
Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of in...
Silicon nanowires have numerous potential applications, including transistors, memories, photovoltai...
The present invention provides a transistor device adapted to provide at least one tunnel barrier, c...
A new concept of nanoscale MOSFET, the Variable-Barrier Resonant Tunneling Transistor, is presented ...
Performances of a new concept of nanoscale MOSFET, the Variable-Barrier Resonant Tunneling (VBRT) Tr...
Performances of a new concept of nanoscale MOSFET, the gate modulated resonant tunneling (RT)-FET, a...
We study here, using non-equilibrium Green’s function quantum simulations, the impact of dopant segr...
In this paper, we present 3D quantum simulations based on Non-Equilibrium Green’s Function (NEGF) fo...
The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower p...
As number of transistors per unit area in integrated circuits increases, power dissipation of the ch...
Tunnel FETs (TFETs) with steep subthreshold slope have been attracting much attention as building bl...
In this paper, we investigate the effect of cross-section variations in nanowire MUGFETs through 3D ...
Power consumption has been among the most important challenges for electronics industry and transist...
In this paper, we report the possibility of achieving sub-kT/q subthreshold slope (i.e. lower than 5...
As CMOS electronics grow ever more ubiquitous and essential to modern life, managing and reducing po...
Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of in...
Silicon nanowires have numerous potential applications, including transistors, memories, photovoltai...
The present invention provides a transistor device adapted to provide at least one tunnel barrier, c...
A new concept of nanoscale MOSFET, the Variable-Barrier Resonant Tunneling Transistor, is presented ...
Performances of a new concept of nanoscale MOSFET, the Variable-Barrier Resonant Tunneling (VBRT) Tr...
Performances of a new concept of nanoscale MOSFET, the gate modulated resonant tunneling (RT)-FET, a...
We study here, using non-equilibrium Green’s function quantum simulations, the impact of dopant segr...
In this paper, we present 3D quantum simulations based on Non-Equilibrium Green’s Function (NEGF) fo...
The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower p...
As number of transistors per unit area in integrated circuits increases, power dissipation of the ch...
Tunnel FETs (TFETs) with steep subthreshold slope have been attracting much attention as building bl...
In this paper, we investigate the effect of cross-section variations in nanowire MUGFETs through 3D ...
Power consumption has been among the most important challenges for electronics industry and transist...
In this paper, we report the possibility of achieving sub-kT/q subthreshold slope (i.e. lower than 5...
As CMOS electronics grow ever more ubiquitous and essential to modern life, managing and reducing po...
Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of in...
Silicon nanowires have numerous potential applications, including transistors, memories, photovoltai...
The present invention provides a transistor device adapted to provide at least one tunnel barrier, c...