Add to ORKGA new approach in double gate devices processing based on the wafer bonding of a thin SOI film on pre-etched cavities is presented. In this context, wafer bonding parameters are analyzed. The effects of surface activation and annealing conditions are qualified, quantified and a viable solution is proposed
Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer on...
The wafer bonding technology offers a unique opportunity to combine different materials. This has be...
This paper reports a process for the formation of very high quality single-crystal silicon films on ...
A new approach in double gate devices processing based on the wafer bonding of a thin SOI film on pr...
In this paper, a novel method for the fabrication of planar double-gate (DG) MOS devices is presente...
In this paper, a novel method for the fabrication of planar double-gate (DG) MOS devices is presente...
In this paper, a novel method for the fabrication of planar double-gate (DG) MOS devices is presente...
Fabrication of double-gate metal oxide semiconductor field effect transistors (MOSFET) based on sili...
This paper presents a low-temperature process to transfer devices on ultrathin silicon layers from a...
A simple process to fabricate double gate SOI MOSFET is proposed. The new device structure utilizes ...
We have studied direct bonding and thinning of pre-etched silicon wafers. Silicon-on-insulator (SOI)...
An overview is given on the use of wafer bonding for formation of Silicon-On-Insulator (SOI) materia...
An overview is given on the use of wafer bonding for formation of Silicon-On-Insulator (SOI) materia...
Direct waferbonding is an appropriate technology to join two or more wafers of the same or of differ...
We have studied direct bonding and thinning of pre-etched silicon wafers. Silicon-on-insulator (SOI)...
Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer on...
The wafer bonding technology offers a unique opportunity to combine different materials. This has be...
This paper reports a process for the formation of very high quality single-crystal silicon films on ...
A new approach in double gate devices processing based on the wafer bonding of a thin SOI film on pr...
In this paper, a novel method for the fabrication of planar double-gate (DG) MOS devices is presente...
In this paper, a novel method for the fabrication of planar double-gate (DG) MOS devices is presente...
In this paper, a novel method for the fabrication of planar double-gate (DG) MOS devices is presente...
Fabrication of double-gate metal oxide semiconductor field effect transistors (MOSFET) based on sili...
This paper presents a low-temperature process to transfer devices on ultrathin silicon layers from a...
A simple process to fabricate double gate SOI MOSFET is proposed. The new device structure utilizes ...
We have studied direct bonding and thinning of pre-etched silicon wafers. Silicon-on-insulator (SOI)...
An overview is given on the use of wafer bonding for formation of Silicon-On-Insulator (SOI) materia...
An overview is given on the use of wafer bonding for formation of Silicon-On-Insulator (SOI) materia...
Direct waferbonding is an appropriate technology to join two or more wafers of the same or of differ...
We have studied direct bonding and thinning of pre-etched silicon wafers. Silicon-on-insulator (SOI)...
Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer on...
The wafer bonding technology offers a unique opportunity to combine different materials. This has be...
This paper reports a process for the formation of very high quality single-crystal silicon films on ...