Add to ORKGA comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented. Both single-gate planar and multiple-gate (MuG) silicon-on-insulator (SOI) devices are considered. Device response to the neutron irradiation is assessed through the variations of threshold voltage and transconductance maximum. The difference between strained and nonstrained device response to the high-energy neutrons exposure is clearly evidenced. The reasons for such a difference are discussed. Analysis of the experimental results allows for suggesting that strain relaxation is one of the probable causes
Neutron induced ionisation damage in MOS capacitor and MOSFET structures has been studied As neutron...
The GaN based HEMTs (High Electron Mobility Transistors) are excellent candidates for military and s...
The GaN based HEMTs (High Electron Mobility Transistors) are excellent candidates for military and s...
A comparative investigation of high-energy neutrons effect on strained and non-strained devices with...
A comparative investigation of high-energy neutrons effect on strained and non-strained devices with...
A comparative investigation of high-energy neutrons effect on strained and non-strained devices with...
This work discusses the degradations caused by high-energy neutrons in advanced MOSFETs and compares...
A comparison study is made on the high-energy neutron irradiation response of MuGFETs fabricated on ...
This paper investigates, for the first time, the influence of high-energy neutrons on Multiple-Gate ...
This paper investigates, for the first time. the influence of high-energy neutrons on Multiple-Gate ...
This work investigates the effects of high-energy neutrons and gamma-rays on multiple-gate FETs with...
This work investigates the effects of high-energy neutrons and -rays on multiple-gate FETs with diff...
50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-...
50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-...
50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-...
Neutron induced ionisation damage in MOS capacitor and MOSFET structures has been studied As neutron...
The GaN based HEMTs (High Electron Mobility Transistors) are excellent candidates for military and s...
The GaN based HEMTs (High Electron Mobility Transistors) are excellent candidates for military and s...
A comparative investigation of high-energy neutrons effect on strained and non-strained devices with...
A comparative investigation of high-energy neutrons effect on strained and non-strained devices with...
A comparative investigation of high-energy neutrons effect on strained and non-strained devices with...
This work discusses the degradations caused by high-energy neutrons in advanced MOSFETs and compares...
A comparison study is made on the high-energy neutron irradiation response of MuGFETs fabricated on ...
This paper investigates, for the first time, the influence of high-energy neutrons on Multiple-Gate ...
This paper investigates, for the first time. the influence of high-energy neutrons on Multiple-Gate ...
This work investigates the effects of high-energy neutrons and gamma-rays on multiple-gate FETs with...
This work investigates the effects of high-energy neutrons and -rays on multiple-gate FETs with diff...
50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-...
50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-...
50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-...
Neutron induced ionisation damage in MOS capacitor and MOSFET structures has been studied As neutron...
The GaN based HEMTs (High Electron Mobility Transistors) are excellent candidates for military and s...
The GaN based HEMTs (High Electron Mobility Transistors) are excellent candidates for military and s...