Total dose radiation response of multilayer buried insulators

The high radiation tolerance of SOI CMOS ICs to transient radiation effects and single event upset is well known [1], however, in contrast SOI CMOS devices are known to be rather susceptible to total-dose radiation effects. This sensitivity to total-dose exposure is associated with radiation-induced positive charge trapping in the thick buried oxides, which results in parasitic back-channel conduction in n-channel MOSFETs [2]. The most widely used method to suppress the radiation-induced back-channel conduction is additional doping of the Si film near the silicon film — buried insulator interface [3], however, at high irradiation doses this method is not always adequate