Some current fabrication technologies of SOI nano devices are reviewed in this paper. By means of arsenic-assisted etching and oxidation effects, we have fabricated several SOI nano devices: single-electron transistor, nano floating gate memory device and cell, Ω-gate elevated source/drain MOSFET. The application of this technique for fabricating a Schottky barrier MOSFET is also presented
Main focus of this project was the fabrication of silicon based single electron transistors. We deve...
Flash memories have the advantages of high access speed and low poser dissipation. With the improvem...
The Schottky barrier MOSFETs with channel length of 70nm have been fabricated with sidewall etchback...
This paper reports a simple fabrication process of Si "twin nano wires" based on As dopant effect wh...
International audienceSilicon On Insulator-based devices seem to be the best candidates for the ulti...
[[abstract]]We propose a promising fabrication technology for single-electron transistors based on a...
With the development of nano-fabrication techniques, nano-structure devices will be the basis of the...
A new self-assembly patterning method for generation of epitaxial CoSi2 nanostructures was used to f...
This paper reports on the fabrication of a silicon-on-insulator nano flash memory device based on th...
Abstract- Single-electron transistor (SET) is attractive devices to use for large-scale integration....
We present a versatile nanodamascene process for the realization of low-power nanoelectronic devices...
A self-assembly patterning method for generation of epitaxial CoSi 2 nanostructures was used to fabr...
The actual trends in microelectronics are the reduction of the dimensions and the search of new devi...
A self-assembly patterning method for generation of epitaxial CoSi2 nanostructures was used to fabri...
Balestra Abstract — A review of recently explored new effects in SOI nanodevices and materials is gi...
Main focus of this project was the fabrication of silicon based single electron transistors. We deve...
Flash memories have the advantages of high access speed and low poser dissipation. With the improvem...
The Schottky barrier MOSFETs with channel length of 70nm have been fabricated with sidewall etchback...
This paper reports a simple fabrication process of Si "twin nano wires" based on As dopant effect wh...
International audienceSilicon On Insulator-based devices seem to be the best candidates for the ulti...
[[abstract]]We propose a promising fabrication technology for single-electron transistors based on a...
With the development of nano-fabrication techniques, nano-structure devices will be the basis of the...
A new self-assembly patterning method for generation of epitaxial CoSi2 nanostructures was used to f...
This paper reports on the fabrication of a silicon-on-insulator nano flash memory device based on th...
Abstract- Single-electron transistor (SET) is attractive devices to use for large-scale integration....
We present a versatile nanodamascene process for the realization of low-power nanoelectronic devices...
A self-assembly patterning method for generation of epitaxial CoSi 2 nanostructures was used to fabr...
The actual trends in microelectronics are the reduction of the dimensions and the search of new devi...
A self-assembly patterning method for generation of epitaxial CoSi2 nanostructures was used to fabri...
Balestra Abstract — A review of recently explored new effects in SOI nanodevices and materials is gi...
Main focus of this project was the fabrication of silicon based single electron transistors. We deve...
Flash memories have the advantages of high access speed and low poser dissipation. With the improvem...
The Schottky barrier MOSFETs with channel length of 70nm have been fabricated with sidewall etchback...
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