By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here enlighten the role played by congestion in the network
The invention and refinement of sophisticated fabrication techniques such as the Molecular Beam Epit...
A thorough account of the theory of electronic transport in semiconductor nanostructures
As the size of CMOS devices keeps shrinking more and more, power dissipation has become one of the m...
31st Int. Conf. Phys. Semiconductors, Zurich, July-August 2012International audienceBy combining qua...
Invited talk by SHInternational audienceThe Braess paradox, known for traffic and other classical ne...
The Braess paradox, known for traffic and other classical networks, lies in the fact that adding a n...
International audienceWe present evidence for a counterintuitive behavior of semiconductor mesoscopi...
A counter-intuitive behavior analogous to the Braess paradox is encountered in a two-terminal mesosc...
This paper deals with the Braess paradox in quantum transport. The scattering matrix formalism is us...
The Braess Paradox is the counterintuitive phenomenon that can occur in a user-optimized network sys...
We theoretically demonstrate that the transport inefficiency recently found experimentally for branc...
Recent advances in semiconductor technology have made possible the fabrication of structures whose d...
Among the plethora of nano-objects, those conducting electricity attracted a great deal of attention...
In this thesis, electron transport in mesoscopic semiconductor nanostructures, in particular so-call...
We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affe...
The invention and refinement of sophisticated fabrication techniques such as the Molecular Beam Epit...
A thorough account of the theory of electronic transport in semiconductor nanostructures
As the size of CMOS devices keeps shrinking more and more, power dissipation has become one of the m...
31st Int. Conf. Phys. Semiconductors, Zurich, July-August 2012International audienceBy combining qua...
Invited talk by SHInternational audienceThe Braess paradox, known for traffic and other classical ne...
The Braess paradox, known for traffic and other classical networks, lies in the fact that adding a n...
International audienceWe present evidence for a counterintuitive behavior of semiconductor mesoscopi...
A counter-intuitive behavior analogous to the Braess paradox is encountered in a two-terminal mesosc...
This paper deals with the Braess paradox in quantum transport. The scattering matrix formalism is us...
The Braess Paradox is the counterintuitive phenomenon that can occur in a user-optimized network sys...
We theoretically demonstrate that the transport inefficiency recently found experimentally for branc...
Recent advances in semiconductor technology have made possible the fabrication of structures whose d...
Among the plethora of nano-objects, those conducting electricity attracted a great deal of attention...
In this thesis, electron transport in mesoscopic semiconductor nanostructures, in particular so-call...
We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affe...
The invention and refinement of sophisticated fabrication techniques such as the Molecular Beam Epit...
A thorough account of the theory of electronic transport in semiconductor nanostructures
As the size of CMOS devices keeps shrinking more and more, power dissipation has become one of the m...