OCTO Layout Variations as an Alternative to Mitigate TID Effects

Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout

Bucher Matthias(http://users.isc.tuc.gr/~mbucher)
Bucher Matthias(http://users.isc.tuc.gr/~mbucher)
Νικολαου Αριστειδης(http://users.isc.tuc.gr/~Anikolaou)
Nikolaou Aristeidis(http://users.isc.tuc.gr/~Anikolaou)
Παπαδοπουλου Αλεξια(http://users.isc.tuc.gr/~alpapadopoulou)
Papadopoulou Alexia(http://users.isc.tuc.gr/~alpapadopoulou)
Μακρης Νικολαος(http://users.isc.tuc.gr/~NMakris)
Makris Nikolaos(http://users.isc.tuc.gr/~NMakris)
Χεβας Λουκας(http://users.isc.tuc.gr/~lchevas)
Chevas Loukas(http://users.isc.tuc.gr/~lchevas)
Borghello Giulio()
Koch Henri D.()
Faccio Federico ()

Summarization: High doses of ionizing irradiation cause significant shifts in design parameters of s...

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Gaillardin, M.
Martinez, M.
Paillet, Philippe
Andrieu, F.
Girard, Sylvain
Raine, Melanie
Marcandella, Claude
Richard, Nicolas
Faynot, O.

August 2013

International audienceIn this paper we investigate the Total Ionizing Dose (TID) response of an Ultr...

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Gaillardin, M.
Martinez, M.
Paillet, Philippe
Andrieu, F.
Girard, Sylvain
Raine, Melanie
Marcandella, Claude
Richard, Nicolas
Faynot, O.

August 2013

International audienceIn this paper we investigate the Total Ionizing Dose (TID) response of an Ultr...

Total Ionizing Dose Effects on the Digital performance of Irradiated OCTO and Conventional Fully Depleted SOI MOSFET

de Souza Fino, Leonardo Navarenho
Aparecida Guazzelli da Silveira, Marcilei
Renaux, Christian
Flandre, Denis
Pinillos Gimenez, Salvador
14th European Conference on radiation and its Effects on Components and Systems (RADECS 2013)

January 2013

This paper investigates and compares experimentally the total ionizing dose (TID) effects in digital...

Improving the X-ray radiation tolerance of the analog ICs by using OCTO layout style

Navarenho de Souza Fino, Leonardo
Guazzelli da Silveira, Marcilei Aparecida
Renaux, Christian
Flandre, Denis
Gimenez, Salvador Pinillos
2013 Symposium on Microelectronics Technology and Devices (SBMicro 2013)

January 2013

This paper investigates and compares experimentally the total ionizing dose (TID) effects in the mai...

Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET

Navarenho de Souza Fino, Leonardo
Davini Neto, Enrico
Aparecida Guazzelli da Silveira, Marcilei
Renaux, Christian
Flandre, Denis
Pinillos Gimenez, Salvador

January 2015

This paper performs an experimental comparative study of the total ionizing dose effects due to the ...

Boosting the Radiation Hardness and Higher Reestablishing Pre-Rad Conditions by Using OCTO Layout Style for MOSFETs

de Souza Fino, Leonardo Navarenho
Aparecida Guazzelli da Silveira, Marcilei
Renaux, Christian
Flandre, Denis
Pinillos Gimenez, Salvador
29th Symposium on Microelectronics Technology and Devices (SBMicro 2014)

January 2014

This manuscript has the objective to perform an experimental comparative analysis of the total ioniz...

The Influence of Back Gate Bias on the OCTO SOI MOSFET's Response to X-ray Radiation

N. de S. Fino, Leonardo
A. G. Silveira, Marcilei
Renaux, Christian
Flandre, Denis
Pinillos Gimenez, Salvador

January 2015

This work investigates the X-ray irradiation impact on the performance of an on-conventional transis...

Comparative Experimental Study of X-Ray Radiation Effects in the Threshold Voltage between the OCTO and Conventional SOI nMOSFETs

de Souza Fino, Leonardo Navarenho
Aparecida Guazzelli da Silveira, Marcilei
Renaux, Christian
Flandre, Denis
Gimenez, Salvador Pinillos
VIII Workshop on Semiconductors and Micro & Nano Technology (Seminatec 2013)

January 2013

This paper describes a comparative experimental study of the influence of Total Ionizing Dose (TID),...

Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies

Zongru Li
Christopher Jarrett Elash
Chen Jin
Li Chen
Jiesi Xing
Zhiwu Yang
Shuting Shi

June 2022

Total ionizing dose (TID) effects from Co-60 gamma ray and heavy ion irradiation were studied at the...

Performance of OCTO Layout Style on SOI MOSFET Switches under High-temperature Operation

Salerno Galembeck, Egon Henrique
Flandre, Denis
Renaux, Christian
Pinillos Gimenez, Salvador

January 2019

The present paper performs an experimental comparative study of the main switching electrical parame...

Digital Performance of OCTO Layout Style on SOI MOSFET at High Temperature Environment

Salerno Galembeck, Egon Henrique
Flandre, Denis
Renaux, Christian
Pinillos Gimenez, Salvador

January 2019

This present paper performs an experimental comparative study of the main digital parameters and fig...

Design of micropower operational transconductance amplifiers for high total ionizing dose effects

Παπαδοπουλου Αλεξια(http://users.isc.tuc.gr/~alpapadopoulou)
Papadopoulou Alexia(http://users.isc.tuc.gr/~alpapadopoulou)
Μακρης Νικολαος(http://users.isc.tuc.gr/~NMakris)
Makris Nikolaos(http://users.isc.tuc.gr/~NMakris)
Χεβας Λουκας(http://users.isc.tuc.gr/~lchevas)
Chevas Loukas(http://users.isc.tuc.gr/~lchevas)
Νικολαου Αριστειδης(http://users.isc.tuc.gr/~Anikolaou)
Nikolaou Aristeidis(http://users.isc.tuc.gr/~Anikolaou)
Bucher Matthias(http://users.isc.tuc.gr/~mbucher)
Bucher Matthias(http://users.isc.tuc.gr/~mbucher)

Summarization: The design of radiation-hard analog/mixed signal Integrated Circuits for high Total I...

Boosting the SOI MOSFET Electrical Performance by Using the Octogonal Layout Style in High Temperature Environment

Galembeck, Egon H.S.
Renaux, Christian
Flandre, Denis
Finco, Saulo
Gimenez, Salvador P.

January 2017

This paper describes an experimental comparative study between the Silicon-On-Insulator (SOI) metal-...

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Gaillardin, M.
Martinez, M.
Paillet, Philippe
Andrieu, F.
Girard, Sylvain
Raine, Melanie
Marcandella, Claude
Richard, Nicolas
Faynot, O.

August 2013

International audienceIn this paper we investigate the Total Ionizing Dose (TID) response of an Ultr...

Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout

Bucher Matthias(http://users.isc.tuc.gr/~mbucher)
Bucher Matthias(http://users.isc.tuc.gr/~mbucher)
Νικολαου Αριστειδης(http://users.isc.tuc.gr/~Anikolaou)
Nikolaou Aristeidis(http://users.isc.tuc.gr/~Anikolaou)
Παπαδοπουλου Αλεξια(http://users.isc.tuc.gr/~alpapadopoulou)
Papadopoulou Alexia(http://users.isc.tuc.gr/~alpapadopoulou)
Μακρης Νικολαος(http://users.isc.tuc.gr/~NMakris)
Makris Nikolaos(http://users.isc.tuc.gr/~NMakris)
Χεβας Λουκας(http://users.isc.tuc.gr/~lchevas)
Chevas Loukas(http://users.isc.tuc.gr/~lchevas)
Borghello Giulio()
Koch Henri D.()
Faccio Federico ()

Summarization: High doses of ionizing irradiation cause significant shifts in design parameters of s...

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Gaillardin, M.
Martinez, M.
Paillet, Philippe
Andrieu, F.
Girard, Sylvain
Raine, Melanie
Marcandella, Claude
Richard, Nicolas
Faynot, O.

August 2013

International audienceIn this paper we investigate the Total Ionizing Dose (TID) response of an Ultr...

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Gaillardin, M.
Martinez, M.
Paillet, Philippe
Andrieu, F.
Girard, Sylvain
Raine, Melanie
Marcandella, Claude
Richard, Nicolas
Faynot, O.

August 2013

International audienceIn this paper we investigate the Total Ionizing Dose (TID) response of an Ultr...

Total Ionizing Dose Effects on the Digital performance of Irradiated OCTO and Conventional Fully Depleted SOI MOSFET

de Souza Fino, Leonardo Navarenho
Aparecida Guazzelli da Silveira, Marcilei
Renaux, Christian
Flandre, Denis
Pinillos Gimenez, Salvador
14th European Conference on radiation and its Effects on Components and Systems (RADECS 2013)

January 2013

This paper investigates and compares experimentally the total ionizing dose (TID) effects in digital...

Improving the X-ray radiation tolerance of the analog ICs by using OCTO layout style

Navarenho de Souza Fino, Leonardo
Guazzelli da Silveira, Marcilei Aparecida
Renaux, Christian
Flandre, Denis
Gimenez, Salvador Pinillos
2013 Symposium on Microelectronics Technology and Devices (SBMicro 2013)

January 2013

This paper investigates and compares experimentally the total ionizing dose (TID) effects in the mai...

Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET

Navarenho de Souza Fino, Leonardo
Davini Neto, Enrico
Aparecida Guazzelli da Silveira, Marcilei
Renaux, Christian
Flandre, Denis
Pinillos Gimenez, Salvador

January 2015

This paper performs an experimental comparative study of the total ionizing dose effects due to the ...

Boosting the Radiation Hardness and Higher Reestablishing Pre-Rad Conditions by Using OCTO Layout Style for MOSFETs

de Souza Fino, Leonardo Navarenho
Aparecida Guazzelli da Silveira, Marcilei
Renaux, Christian
Flandre, Denis
Pinillos Gimenez, Salvador
29th Symposium on Microelectronics Technology and Devices (SBMicro 2014)

January 2014

This manuscript has the objective to perform an experimental comparative analysis of the total ioniz...

The Influence of Back Gate Bias on the OCTO SOI MOSFET's Response to X-ray Radiation

N. de S. Fino, Leonardo
A. G. Silveira, Marcilei
Renaux, Christian
Flandre, Denis
Pinillos Gimenez, Salvador

January 2015

This work investigates the X-ray irradiation impact on the performance of an on-conventional transis...

Comparative Experimental Study of X-Ray Radiation Effects in the Threshold Voltage between the OCTO and Conventional SOI nMOSFETs

de Souza Fino, Leonardo Navarenho
Aparecida Guazzelli da Silveira, Marcilei
Renaux, Christian
Flandre, Denis
Gimenez, Salvador Pinillos
VIII Workshop on Semiconductors and Micro & Nano Technology (Seminatec 2013)

January 2013

This paper describes a comparative experimental study of the influence of Total Ionizing Dose (TID),...

Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies

Zongru Li
Christopher Jarrett Elash
Chen Jin
Li Chen
Jiesi Xing
Zhiwu Yang
Shuting Shi

June 2022

Total ionizing dose (TID) effects from Co-60 gamma ray and heavy ion irradiation were studied at the...

Performance of OCTO Layout Style on SOI MOSFET Switches under High-temperature Operation

Salerno Galembeck, Egon Henrique
Flandre, Denis
Renaux, Christian
Pinillos Gimenez, Salvador

January 2019

The present paper performs an experimental comparative study of the main switching electrical parame...

Digital Performance of OCTO Layout Style on SOI MOSFET at High Temperature Environment

Salerno Galembeck, Egon Henrique
Flandre, Denis
Renaux, Christian
Pinillos Gimenez, Salvador

January 2019

This present paper performs an experimental comparative study of the main digital parameters and fig...

Design of micropower operational transconductance amplifiers for high total ionizing dose effects

Παπαδοπουλου Αλεξια(http://users.isc.tuc.gr/~alpapadopoulou)
Papadopoulou Alexia(http://users.isc.tuc.gr/~alpapadopoulou)
Μακρης Νικολαος(http://users.isc.tuc.gr/~NMakris)
Makris Nikolaos(http://users.isc.tuc.gr/~NMakris)
Χεβας Λουκας(http://users.isc.tuc.gr/~lchevas)
Chevas Loukas(http://users.isc.tuc.gr/~lchevas)
Νικολαου Αριστειδης(http://users.isc.tuc.gr/~Anikolaou)
Nikolaou Aristeidis(http://users.isc.tuc.gr/~Anikolaou)
Bucher Matthias(http://users.isc.tuc.gr/~mbucher)
Bucher Matthias(http://users.isc.tuc.gr/~mbucher)

Summarization: The design of radiation-hard analog/mixed signal Integrated Circuits for high Total I...

Boosting the SOI MOSFET Electrical Performance by Using the Octogonal Layout Style in High Temperature Environment

Galembeck, Egon H.S.
Renaux, Christian
Flandre, Denis
Finco, Saulo
Gimenez, Salvador P.

January 2017

This paper describes an experimental comparative study between the Silicon-On-Insulator (SOI) metal-...

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Gaillardin, M.
Martinez, M.
Paillet, Philippe
Andrieu, F.
Girard, Sylvain
Raine, Melanie
Marcandella, Claude
Richard, Nicolas
Faynot, O.

August 2013

International audienceIn this paper we investigate the Total Ionizing Dose (TID) response of an Ultr...

Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout

Bucher Matthias(http://users.isc.tuc.gr/~mbucher)
Bucher Matthias(http://users.isc.tuc.gr/~mbucher)
Νικολαου Αριστειδης(http://users.isc.tuc.gr/~Anikolaou)
Nikolaou Aristeidis(http://users.isc.tuc.gr/~Anikolaou)
Παπαδοπουλου Αλεξια(http://users.isc.tuc.gr/~alpapadopoulou)
Papadopoulou Alexia(http://users.isc.tuc.gr/~alpapadopoulou)
Μακρης Νικολαος(http://users.isc.tuc.gr/~NMakris)
Makris Nikolaos(http://users.isc.tuc.gr/~NMakris)
Χεβας Λουκας(http://users.isc.tuc.gr/~lchevas)
Chevas Loukas(http://users.isc.tuc.gr/~lchevas)
Borghello Giulio()
Koch Henri D.()
Faccio Federico ()

Summarization: High doses of ionizing irradiation cause significant shifts in design parameters of s...

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Gaillardin, M.
Martinez, M.
Paillet, Philippe
Andrieu, F.
Girard, Sylvain
Raine, Melanie
Marcandella, Claude
Richard, Nicolas
Faynot, O.

August 2013

International audienceIn this paper we investigate the Total Ionizing Dose (TID) response of an Ultr...

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Gaillardin, M.
Martinez, M.
Paillet, Philippe
Andrieu, F.
Girard, Sylvain
Raine, Melanie
Marcandella, Claude
Richard, Nicolas
Faynot, O.

August 2013

International audienceIn this paper we investigate the Total Ionizing Dose (TID) response of an Ultr...

OCTO Layout Variations as an Alternative to Mitigate TID Effects

Abstract

Extracted data

OCTO Layout Variations as an Alternative to Mitigate TID Effects

Abstract

Extracted data

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