Charge-trapping characteristics of Ga2O3 nanocrystals for nonvolatile memory applications

The charge-trapping characteristics of Ga2O3 nanocrystals (NCs) with and without nitrogen incorporation were investigated based on Al/Al2O3/Ga2O3/SiO 2/Si capacitors. The formation of Ga2O3 NCs and their chemical bonding states were characterized by transmission electron microscopy and X-ray photoelectron spectroscopy. Compared with the device with Ga2O3 NCs as charge-trapping layer, the one with nitrided Ga2O3 NCs showed a larger memory window (4.7 V at ±10-V sweeping voltage), higher program speed (3.0 V at 100-μs +10 V), and data retention (charge loss of 27% at 125°C), due to higher charge-trapping efficiency of the nitrided Ga2O3 NCs and nitrogen-induced suppressed formation of interlayer at the Ga2O 3/SiO2 interface. © 2012 The Electrochemical Society