β-Ga2O3 Nanowires: Synthesis, Characterization, and p-channel Field-effect Transistor

Quasione-dimensional Ga2 O3 nanowires are synthesized via catalytic chemical vapor deposition method. Their morphology and crystal structure are characterized by electron microscopy and x-ray diffraction techniques, and their optical property is studied by photoluminescence measurement. To develop their future application in nanoelectronic devices, the as-grown Ga2 O3 nanowires are doped with zinc to increase its carrier concentration and subsequently fabricated into field-effect transistors. Electron transport measurements show that the doped nanowires exhibit p -type semiconducting behavior with a significant enhancement of conductivity. © 2005 American Institute of Physics