A model is proposed to account for the high-frequency characteristics of double-gate (DG) MOSFETs. Parasitic gate capacitances and gate resistances, associated with the geometry of DG MOSFETs, are investigated in detail. The model is verified by physical device simulation. Furthermore, the behavior of devices in the RF domain, including frequency responses and high-frequency noise performance, are predicted. © 2006 IEEE
Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS tech...
This paper presents an analytical model for intrinsic short-circuit admittance (Y) parameters of DH-...
In this letter, we analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer appl...
Double gate (DG) MOSFETs have recently attracted much attention for both logic and analog/RF applica...
The ultra thin body (UTB) double gate (DG) MOSFET is believed to be the most promising device candid...
This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The hi...
This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The hi...
The advancements in semiconductor technology greatly impact the growth of hybrid VLSI devices and co...
AbstractIn this paper, we have explored the drain current model and subthreshold model of Cylindrica...
International audienceAn analytical model for the transconductance to drain current ratio (gm/Id) of...
AbstractIn this paper, we have explored the drain current model and subthreshold model of Cylindrica...
International audienceAn analytical model for the transconductance to drain current ratio (gm/Id) of...
The rapid evolution of silicon MOSFET technology is fueled by a never-ending demand for better perfo...
In performance driven layout design, parasitic components need to be evaluated with a reasonable deg...
Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS tech...
Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS tech...
This paper presents an analytical model for intrinsic short-circuit admittance (Y) parameters of DH-...
In this letter, we analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer appl...
Double gate (DG) MOSFETs have recently attracted much attention for both logic and analog/RF applica...
The ultra thin body (UTB) double gate (DG) MOSFET is believed to be the most promising device candid...
This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The hi...
This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The hi...
The advancements in semiconductor technology greatly impact the growth of hybrid VLSI devices and co...
AbstractIn this paper, we have explored the drain current model and subthreshold model of Cylindrica...
International audienceAn analytical model for the transconductance to drain current ratio (gm/Id) of...
AbstractIn this paper, we have explored the drain current model and subthreshold model of Cylindrica...
International audienceAn analytical model for the transconductance to drain current ratio (gm/Id) of...
The rapid evolution of silicon MOSFET technology is fueled by a never-ending demand for better perfo...
In performance driven layout design, parasitic components need to be evaluated with a reasonable deg...
Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS tech...
Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS tech...
This paper presents an analytical model for intrinsic short-circuit admittance (Y) parameters of DH-...
In this letter, we analyze the suitability of the double gate MOSFETs (DG MOSFETs) for RF-mixer appl...
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