A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability

Ma, C.
Li, B.
Zhang, L.
He, J.
Zhang, X.
Lin, X.
Chan, Man Sun

Publication date

January 2009

DOI

10.1109/ISQED.2009.4810262

Abstract

A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model. © 2009 IEEE

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A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability

Abstract

Extracted data

A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability

Abstract

Extracted data

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