Numerical Study on Dual Material Gate Nanowire Tunnel Field-Effect Transistor

A numerical study on the characteristics of dualmaterial gate nanowire tunnel field-effect transistor (DMG-NTFET) is presented using 3-D TCAD simulations in this paper. Compared with the single-material gate tunnel field-effect transistor (SMG-NTFET), the numerical simulation results demonstrate that the DMG-NTFET has lower leakage current I-OFF with a negligible loss of I-ON. Moreover, the impact of two gates' work function difference on the DMG-NTFET ON/OFF current ratio, transconductance (G(m)) and DIBL effects is studied, and the effect of control gate length on the I-ON and I-OFF is demonstrated. Finally, the optimization design of the work function difference and the control gate length for the DMG-NTFET is discussed