This paper presents the design of a CMOS synthesizer for dual-conversion zero-IF2 Multi-Band OFDM (MB-OFDM) transceivers covering the first 9 frequency bands from 3.1 GHz to 8.0 GHz, each with a bandwidth of 528 MHz. A wideband single-sideband mixer with wideband inductive network loading is proposed. Moreover, a modified transformer-coupled quadrature VCO and interconnection-loading-insensitive layout technique are employed. Fabricated in TSMC 0.18-mu m CMOS process and operated at 1.5 V, the synthesizer measures phase noise of - 127.4 dBc/Hz at 10 MHz offset, integrated phase noise of 4.43 degrees, sideband suppression of better than -22 dBc, and a switching time of less than Ins while consuming 59 mA
With the growing demand for high-speed and high-quality short-range communication, multi-band ortho...
The wireless communication industry is currently experiencing a tremendous growth. The frequency syn...
An 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB is implemented in a 0.25µm BiCMOS ...
This paper presents the design of a CMOS Receiver Front-End (RFE) with dual-conversion zero-IF archi...
This paper presents the design and integration of a fully-integrated dual-conversion zero-IF2 CMOS t...
Driven by increasing demand of short-range and high-data-rate wireless communications, ultra-wideban...
A frequency synthesizer for UWB MB-OFDM applications is designed in TSMC 90 nm CMOS technolo...
Abstract- This paper presents the design and fully integrated dual-conversion zero-IF CMOS transceiv...
One of the challenges in implementing a frequency synthesizer for Multi-band OFDM Ultra Wideband (MB...
The allocation of frequency spectrum by the FCC for Ultra Wideband (UWB) communications in the 3.1-1...
Overcoming the agility limitations of conventional frequency synthesizers in multi-band OFDM ultra w...
Ultra-wideband (UWB) is an emerging broadband wireless technology enabling data rates up to Mbps. ...
Abstract—This work presents an analysis on frequency planning and synthesis for multiband (MB) ortho...
A 2-V 1.8-GHz fully integrated CMOS dual-loop frequency synthesizer is designed in a standard 0.5-mu...
The Ultra-Wideband (UWB) system has emerged as a major solution for wireless communication due to it...
With the growing demand for high-speed and high-quality short-range communication, multi-band ortho...
The wireless communication industry is currently experiencing a tremendous growth. The frequency syn...
An 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB is implemented in a 0.25µm BiCMOS ...
This paper presents the design of a CMOS Receiver Front-End (RFE) with dual-conversion zero-IF archi...
This paper presents the design and integration of a fully-integrated dual-conversion zero-IF2 CMOS t...
Driven by increasing demand of short-range and high-data-rate wireless communications, ultra-wideban...
A frequency synthesizer for UWB MB-OFDM applications is designed in TSMC 90 nm CMOS technolo...
Abstract- This paper presents the design and fully integrated dual-conversion zero-IF CMOS transceiv...
One of the challenges in implementing a frequency synthesizer for Multi-band OFDM Ultra Wideband (MB...
The allocation of frequency spectrum by the FCC for Ultra Wideband (UWB) communications in the 3.1-1...
Overcoming the agility limitations of conventional frequency synthesizers in multi-band OFDM ultra w...
Ultra-wideband (UWB) is an emerging broadband wireless technology enabling data rates up to Mbps. ...
Abstract—This work presents an analysis on frequency planning and synthesis for multiband (MB) ortho...
A 2-V 1.8-GHz fully integrated CMOS dual-loop frequency synthesizer is designed in a standard 0.5-mu...
The Ultra-Wideband (UWB) system has emerged as a major solution for wireless communication due to it...
With the growing demand for high-speed and high-quality short-range communication, multi-band ortho...
The wireless communication industry is currently experiencing a tremendous growth. The frequency syn...
An 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB is implemented in a 0.25µm BiCMOS ...