Field emission characteristics of SiC nanowires prepared by chemical vapour deposition

Silicon carbide (SiC) nanowires on a silicon substrate were prepared using hot-filament-assisted chemical-vapor deposition with a solid silicon and carbon source. The SiC nanowires show good field-emitting properties as revealed by the current-voltage characteristics. Together with its ease of preparation, these SiC nanowires are shown to have great potential in the area of electron field-emitting devices. © 1999 American Institute of Physics