The spin polarization of the current passing through a GaAs quantum dot is found experimentally by Potok et al. [21] to be always polarized in the same direction as external field when varying the gate voltage. This is in disagreement with theories that assume single energy level on the quantum dot. We investigate the problem by considering a model of double level quantum dot with strong exchange coupling between the electrons on the two levels. Variational method was used to construct the approximate ground state, spectral function and then the current. Our results are compared with experiment and follow our expectation. The spin polarizations of current for different couplings between the site and conduction electrons are compared. The ef...
We describe transport measurements on a small lateral dot involving spin polarized injection and det...
This paper presents a theoretical model for the effect of electron-phonon interaction, temperature a...
We consider a new quantum gate mechanism based on electron spins in coupled semiconductor quantum do...
Nonequilibrium Green's function is used to study spin-polarized electron tunneling through a qu...
We first bring up the concept of the spin-current Seebeck effect based on a recent experiment (Vera-...
We analyze the spin-dependent conductance and spin polarization of a double quantum dot in a T-shape...
The electronic states of lateral many-electron quantum dots in high magnetic fields are analyzed in ...
We investigate coherent electron transport through a parallel circuit of two quantum dots (QDs), eac...
Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot embedded in a tunnelin...
This thesis is based on two low temperature experiments in spintronics - physics and engineering of ...
Using nonequilibrium Green's functions we calculate the spin-polarized current and shot noise in a f...
Using nonequilibrium Green's functions we calculate the spin-polarized current and shot noise in a f...
This thesis addresses electron spin phenomena in semi-conductor quantum dots/anti-dots from a comput...
© 2020 Elsevier B.V. Current–voltage characteristics of a spintromechanical device, in which spin-po...
The spin-polarized transport through two-level quantum dots weakly coupled to ferromagnetic leads is...
We describe transport measurements on a small lateral dot involving spin polarized injection and det...
This paper presents a theoretical model for the effect of electron-phonon interaction, temperature a...
We consider a new quantum gate mechanism based on electron spins in coupled semiconductor quantum do...
Nonequilibrium Green's function is used to study spin-polarized electron tunneling through a qu...
We first bring up the concept of the spin-current Seebeck effect based on a recent experiment (Vera-...
We analyze the spin-dependent conductance and spin polarization of a double quantum dot in a T-shape...
The electronic states of lateral many-electron quantum dots in high magnetic fields are analyzed in ...
We investigate coherent electron transport through a parallel circuit of two quantum dots (QDs), eac...
Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot embedded in a tunnelin...
This thesis is based on two low temperature experiments in spintronics - physics and engineering of ...
Using nonequilibrium Green's functions we calculate the spin-polarized current and shot noise in a f...
Using nonequilibrium Green's functions we calculate the spin-polarized current and shot noise in a f...
This thesis addresses electron spin phenomena in semi-conductor quantum dots/anti-dots from a comput...
© 2020 Elsevier B.V. Current–voltage characteristics of a spintromechanical device, in which spin-po...
The spin-polarized transport through two-level quantum dots weakly coupled to ferromagnetic leads is...
We describe transport measurements on a small lateral dot involving spin polarized injection and det...
This paper presents a theoretical model for the effect of electron-phonon interaction, temperature a...
We consider a new quantum gate mechanism based on electron spins in coupled semiconductor quantum do...