This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract parameters of the MOS devices' post-breakdown current. The experimental results of the post breakdown current at different temperature are used to validity the LogCDO method. The post-breakdown current of MOS device is first equivalent to a double diode circuit model, and then the improved LogCDO method is applied to extract key parameters. The extraction results are consistent very well with the measured data even over a wide range of temperature
A new procedure is presented to separate the effects of source-and-drain series resistance and mobil...
A new procedure is presented to separate the effects of source-and-drain series resistance and mobil...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract pa...
The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their...
The linear cofactor difference extrema of metaloxide-semiconductor field effect transistor (MOSFET) ...
The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their...
The linear cofactor difference operator (LCDO) method, a direct parameter extraction method for gene...
The direct extraction of the key static parameters of a general diode by the new method named Linear...
A new method for the extraction of the MOSFET parameters is presented in this letter. The method, wh...
The proportional difference operator (PDO) method is presented to study the subthreshold behavior of...
A new subthreshold analysis technique, namely, the linear cofactor difference method, is presented i...
International audienceA new parameter extraction methodology based on split C-V is proposed for FDSO...
A new experimental technique namely the linear cofactor difference sub-threshold voltage method is p...
This thesis presents a study of MOS transistor model parameter extraction. The objective of this stu...
A new procedure is presented to separate the effects of source-and-drain series resistance and mobil...
A new procedure is presented to separate the effects of source-and-drain series resistance and mobil...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract pa...
The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their...
The linear cofactor difference extrema of metaloxide-semiconductor field effect transistor (MOSFET) ...
The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their...
The linear cofactor difference operator (LCDO) method, a direct parameter extraction method for gene...
The direct extraction of the key static parameters of a general diode by the new method named Linear...
A new method for the extraction of the MOSFET parameters is presented in this letter. The method, wh...
The proportional difference operator (PDO) method is presented to study the subthreshold behavior of...
A new subthreshold analysis technique, namely, the linear cofactor difference method, is presented i...
International audienceA new parameter extraction methodology based on split C-V is proposed for FDSO...
A new experimental technique namely the linear cofactor difference sub-threshold voltage method is p...
This thesis presents a study of MOS transistor model parameter extraction. The objective of this stu...
A new procedure is presented to separate the effects of source-and-drain series resistance and mobil...
A new procedure is presented to separate the effects of source-and-drain series resistance and mobil...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...