Highly pure, ultralong, and uniform-sized semiconductor nanowires in bulk quantity were synthesized by thermal evaporation or laser ablation of semiconductor powders mixed with oxides. Transmission electron microscopy study shows that decomposition of semiconductor suboxides and defect structures play important roles in enhancing the formation and growth of high-quality nanowires. A new growth mechanism is proposed on the basis of microstructure and different morphologies of the nanowires observed
Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for app...
[[abstract]]Recent progress in the synthesis and characterization of nanowires has been driven by th...
High quality ZnO nanowires were synthesized at high temperature without using heterogenous catalysts...
Highly pure, ultra long and uniform-sized semiconductor nanowires in bulk-quantity have been synthes...
A new method based on oxide-assisted growth has been developed that is capable of producing a bulk q...
The tremendous interest in nanoscale structures such as quantum dots (zero-dimension) and wires (qua...
Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy tec...
textSemiconductor nanowires are one-dimensional nanoscale systems that exhibit many unique propertie...
The synthesis of highly oriented, large scale, and very long silicon nanowires on flat silicon subst...
We report the growth mechanism of metal oxide nanostructures synthesized by electron beam evaporatio...
[[abstract]]Rationally controlled growth of inorganic semiconductor nanowires is important for their...
Abstract: In this talk I will give examples of the rapid development in the areas of growth, process...
Indium-tin oxide nanowires were deposited by excimer laser ablation onto catalyst-free oxidized sili...
A general method to synthesize III-V binary compound nanowires based on the oxide-assisted growth ap...
New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparti...
Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for app...
[[abstract]]Recent progress in the synthesis and characterization of nanowires has been driven by th...
High quality ZnO nanowires were synthesized at high temperature without using heterogenous catalysts...
Highly pure, ultra long and uniform-sized semiconductor nanowires in bulk-quantity have been synthes...
A new method based on oxide-assisted growth has been developed that is capable of producing a bulk q...
The tremendous interest in nanoscale structures such as quantum dots (zero-dimension) and wires (qua...
Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy tec...
textSemiconductor nanowires are one-dimensional nanoscale systems that exhibit many unique propertie...
The synthesis of highly oriented, large scale, and very long silicon nanowires on flat silicon subst...
We report the growth mechanism of metal oxide nanostructures synthesized by electron beam evaporatio...
[[abstract]]Rationally controlled growth of inorganic semiconductor nanowires is important for their...
Abstract: In this talk I will give examples of the rapid development in the areas of growth, process...
Indium-tin oxide nanowires were deposited by excimer laser ablation onto catalyst-free oxidized sili...
A general method to synthesize III-V binary compound nanowires based on the oxide-assisted growth ap...
New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparti...
Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for app...
[[abstract]]Recent progress in the synthesis and characterization of nanowires has been driven by th...
High quality ZnO nanowires were synthesized at high temperature without using heterogenous catalysts...