Si nanowires (SINWs) with different diameters have been synthesized by laser ablation in different ambient gases. SINWs with the diameter distribution peaks at similar to 13.2 and similar to 9.5 nm have been obtained respectively in He and Ar (5% H-2). SINWs produced in N-2 had the smallest peak diameter at 6 nm, and are mixed in with some spherical particles with diameters ranging from similar to 9 nm to several hundreds nm. Elements from the ambient gas were not detected in the SINWs. SINWs produced in Ar(5% H-2) and N-2 atmospheres exhibited photoluminescence and spectral blue-shift with diameter reduction, which are attributable to two-dimensional quantum confinement effects in crystalline nanowires. (C) 1999 American Institute of Physi...
Amorphous silicon nanowires (NWs), 3-50 nm thick and up to 4 mu m long, were grown by room-temperatu...
We report below synthesis of nano-scale silicon wires by using laser ablation at high temperature. B...
International audienceIn this work we have studied a way to control the growth of small diameter sil...
GaSe and Si nanowires (SiNWs) were synthesized by physical evaporation. The photoluminescence (PL) p...
Silicon nanowires (SiNWs) with controlled diameters have been synthesized using a physical evaporati...
Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature la...
We report on a method for the extraction of silicon nanowires (SiNWs) from the by-product of a plasm...
By ablating a silicon monoxide target with a pulsed KrF excimer laser at 1200 degreesC in an Ar atmo...
Silicon nanowires (SiNWs) were grown on an Au-coated Si(111) substrate at various gas pressures by v...
Ultra-thin Silicon Nanowires (SiNWs) were produced by means of an industrial inductively-coupled pla...
Our present work provides a method to control the diameters of the silicon nanowires. As a dominant ...
As the physical and electrical properties of silicon nanowires (SiNWs) are determined by their dimen...
International audienceSilicon nanowires (SiNWs) have remarkable properties allowing new applications...
Silicon (Si) is the most widely used semiconductor since many decades. Due to the developments in th...
Amorphous silicon nanowires (NWs), 3-50 nm thick and up to 4 mu m long, were grown by room-temperatu...
We report below synthesis of nano-scale silicon wires by using laser ablation at high temperature. B...
International audienceIn this work we have studied a way to control the growth of small diameter sil...
GaSe and Si nanowires (SiNWs) were synthesized by physical evaporation. The photoluminescence (PL) p...
Silicon nanowires (SiNWs) with controlled diameters have been synthesized using a physical evaporati...
Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature la...
We report on a method for the extraction of silicon nanowires (SiNWs) from the by-product of a plasm...
By ablating a silicon monoxide target with a pulsed KrF excimer laser at 1200 degreesC in an Ar atmo...
Silicon nanowires (SiNWs) were grown on an Au-coated Si(111) substrate at various gas pressures by v...
Ultra-thin Silicon Nanowires (SiNWs) were produced by means of an industrial inductively-coupled pla...
Our present work provides a method to control the diameters of the silicon nanowires. As a dominant ...
As the physical and electrical properties of silicon nanowires (SiNWs) are determined by their dimen...
International audienceSilicon nanowires (SiNWs) have remarkable properties allowing new applications...
Silicon (Si) is the most widely used semiconductor since many decades. Due to the developments in th...
Amorphous silicon nanowires (NWs), 3-50 nm thick and up to 4 mu m long, were grown by room-temperatu...
We report below synthesis of nano-scale silicon wires by using laser ablation at high temperature. B...
International audienceIn this work we have studied a way to control the growth of small diameter sil...