Thermal stability of nickel silicide films in submicron p-type polysilicon lines
- Poon, M.C.
- Deng, F.
- Wong, H.
- Chan, M.
- Sin, J.K.O.
- Lau, S.S.
- Ho, C.H.
- Han, P.G.
Publication date
January 1997
DOIAbstract
In this work, we found that very low resistivity NiSi can be thermally stable and is independent on linewidth for deep submicron p-type poly-Si lines up to 700-750 °C for 0.5 and 1 hr annealing, and for linewidths as narrow as 0.2-0.1 μm. It widens the thermal budget windows and process tolerance for NiSi and further suggest that NiSi is a very promising contact material candidate for future ULSI devices
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