Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design

Huo, X.
Chen, K.J.
Luong, H.
Chan, P.C.H.

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Publication date

January 2004

DOI

10.1109/RFIC.2004.1320699

Journal

issn:1529-2517

Abstract

A physical based lumped element model is developed for lossy silicon Substrate considering both electric loss and eddy current loss induced by the substrate. Simplified ladder structure is used to accurate model the skin effect of the high conductivity silicon substrate. Good agreement with full wave solver is obtained for inductors on different resistivity silicon substrates

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Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design

Abstract

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Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design

Abstract

Extracted data

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