Add to ORKGHafnium oxide film grown by the method of direct sputtering hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium oxide and silicon substrate was bad. The electrical characterizes of hafnium oxide and its interface layer had been studied in detail by capacitance-voltage (C-V) and current-voltage (I-V) measurement. It was observed that the interface layer contains charge traps that affected the devices operation
Hafnium oxide films were deposited on silicon by High Pressure Reactive Sputtering HPRS at pressur...
Thin films of hafnium oxide have been deposited by the high-pressure reactive sputtering (HPRS) syst...
The effects of rapid thermal annealing on the interface charge and oxide charge densities of sputter...
The reliability and integrity of HfO2 prepared by direct sputtering of hafnium were studied. By moni...
In this work, low temperature physically deposited hafnium oxide films are investigated in terms of ...
Hafnium oxide films were RF sputtered from HfO2 target in Ar/O2 or Ar/N2 ambient on silicon substrat...
The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal...
The interface properties of the hafnium gate oxide films prepared by direct sputtering of hafnium in...
The physical and electrical properties of hafnium oxide (HfO2) thin films deposited by high pressure...
The physical and electrical properties of hafnium oxide HfO2 thin films deposited by High Pressure...
The origins of the interface trap generation and the effects of thermal annealing on the interface a...
Hafnium oxide (HfO2) was investigated as an alternative possible gate dielectric. MOS capacitor usin...
The downscaling of MOSFET devices to improve the packing density and device performance has faced a ...
Thin films of hafnium oxide were grown by reactive molecular beam epitaxy. The growth parameters, su...
In this work, hafnium oxide (HfO2) thin films were deposited on p-type silicon substrate by radio fr...
Hafnium oxide films were deposited on silicon by High Pressure Reactive Sputtering HPRS at pressur...
Thin films of hafnium oxide have been deposited by the high-pressure reactive sputtering (HPRS) syst...
The effects of rapid thermal annealing on the interface charge and oxide charge densities of sputter...
The reliability and integrity of HfO2 prepared by direct sputtering of hafnium were studied. By moni...
In this work, low temperature physically deposited hafnium oxide films are investigated in terms of ...
Hafnium oxide films were RF sputtered from HfO2 target in Ar/O2 or Ar/N2 ambient on silicon substrat...
The breakdown characteristics of hafnium gate oxide prepared by direct sputtering with rapid thermal...
The interface properties of the hafnium gate oxide films prepared by direct sputtering of hafnium in...
The physical and electrical properties of hafnium oxide (HfO2) thin films deposited by high pressure...
The physical and electrical properties of hafnium oxide HfO2 thin films deposited by High Pressure...
The origins of the interface trap generation and the effects of thermal annealing on the interface a...
Hafnium oxide (HfO2) was investigated as an alternative possible gate dielectric. MOS capacitor usin...
The downscaling of MOSFET devices to improve the packing density and device performance has faced a ...
Thin films of hafnium oxide were grown by reactive molecular beam epitaxy. The growth parameters, su...
In this work, hafnium oxide (HfO2) thin films were deposited on p-type silicon substrate by radio fr...
Hafnium oxide films were deposited on silicon by High Pressure Reactive Sputtering HPRS at pressur...
Thin films of hafnium oxide have been deposited by the high-pressure reactive sputtering (HPRS) syst...
The effects of rapid thermal annealing on the interface charge and oxide charge densities of sputter...