Electrothermal Coupling and Threshold-switching Simulation Study on Phase Change Memory (PCM) Cell

As one of the candidates of the next generation non-volatile memory(NVM), phase change memory(PCM) has been paid more attention. But there are many open issue in simulation and phase-change mechanism. In this work, an electrothermal simulation is implemented, which can provide an evaluation method for PCM geometry and scaling design. At the time, a threshold-switching mechanism is discussed. A threshold-switching curve is achieved using device simulator, results show that this mechanism can explain the threshold-switching phenomenon