We report a frequency-dependent output conductance of partially depleted SOI MOSFET's. For high-frequency analog applications, the output conductance is less than half and the dynamic range of Vd is two times higher than the dc I-V characteristics would indicate. A simple physical model for the phenomenon that involves a phenomenological body charging capacitance and can fit data within 10% is presented
Recently, there has been a growing interest in using SOI MOSFET as the device dimension shrinks to n...
Measurements of intrinsic gate capacitances of SOI MOSFETs are described and shown to provide valuab...
In this paper, the Southampton Thermal Analogue (STAG) compact model for partially depleted (PD) sil...
A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are partic...
The small signal characteristics in the frequency domain are investigated to quantify the impact of ...
This paper analyses the frequency dependence of the output conductance (G(d)) of several partially d...
A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are partic...
In this paper analysed about the Fully Depleted (FD), Body Tied (BT) or Dynamic Threshold (DT) devic...
The paper analyzes the influence of the Si substrate on the AC characteristics of silicon-on-insulat...
The paper analyzes the influence of the Si substrate on the AC characteristics of silicon-on-insulat...
The aims of the work presented in this thesis are twofold: to characterise the dynamic behaviour of ...
The present paper investigates the influence of the silicon substrate on the AC characteristics of f...
Body-contacts (BC) partially depleted (PD) silicon-on-insulator (SOI) MOSFETs suffer from a loss of ...
This paper analyzes the frequency dependence of the gate transconductance (G(m)) and output conducta...
Abstract – An empirical non-linear model for SOI MOSFET useful for large-signal simulations of high...
Recently, there has been a growing interest in using SOI MOSFET as the device dimension shrinks to n...
Measurements of intrinsic gate capacitances of SOI MOSFETs are described and shown to provide valuab...
In this paper, the Southampton Thermal Analogue (STAG) compact model for partially depleted (PD) sil...
A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are partic...
The small signal characteristics in the frequency domain are investigated to quantify the impact of ...
This paper analyses the frequency dependence of the output conductance (G(d)) of several partially d...
A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are partic...
In this paper analysed about the Fully Depleted (FD), Body Tied (BT) or Dynamic Threshold (DT) devic...
The paper analyzes the influence of the Si substrate on the AC characteristics of silicon-on-insulat...
The paper analyzes the influence of the Si substrate on the AC characteristics of silicon-on-insulat...
The aims of the work presented in this thesis are twofold: to characterise the dynamic behaviour of ...
The present paper investigates the influence of the silicon substrate on the AC characteristics of f...
Body-contacts (BC) partially depleted (PD) silicon-on-insulator (SOI) MOSFETs suffer from a loss of ...
This paper analyzes the frequency dependence of the gate transconductance (G(m)) and output conducta...
Abstract – An empirical non-linear model for SOI MOSFET useful for large-signal simulations of high...
Recently, there has been a growing interest in using SOI MOSFET as the device dimension shrinks to n...
Measurements of intrinsic gate capacitances of SOI MOSFETs are described and shown to provide valuab...
In this paper, the Southampton Thermal Analogue (STAG) compact model for partially depleted (PD) sil...