A physical analytical model of multilayer on-chip inductors

An analytical model of multilayer on-chip inductors for CMOS integrated circuits based on physical principles has been developed. It provides accurate prediction of the self-resonant frequency, and eddy-current losses in the metal and Si substrate, as compared with experimental and numerical simulation results. The model includes improvements in the evaluation of eddy currents in metals caused by the proximity effect, and the equivalent capacitances in multilayer inductors. The Q factors deduced from the model agree well with experimental and numerical simulation results for multilayer inductors over a wide range of frequencies and widths of metal segments. © 2005 IEEE