Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications
- Chen, K.J.
- Maezawa, K.
- Arai, K.
- Yamamoto, M.
- Enoki, T.
Publication date
January 1995
DOI ISSN
0013-5194 Journal
0013-5194 Citation count (estimate)
13Abstract
A new approach to reducing the source resistance in InP-based InAlAs/InGaAs enhancement-mode HEMTs is developed using Pt-based buried-gate technology. Source resistance as small as 0.2Ωmm is obtained, Which results in an excellent transconductance of 1170 mS/mm for a 0.5μm long gate enhancement-mode HEMT
Add to ORKG