Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers

The temperature characteristics of tensile strained GaAs1-yPy-Al0.35Ga0.65As single quantum well heterostructure (SQWH) laser diodes were studied. The dependence of the characteristics temperature (TO) on the quantum well composition in broad-area stripe lasers with identical quantum well widths (115 angstroms) and cavity lengths (750 μm) was examined. Laser diodes with seven different quantum well compositions ranging from y = 0 to y = 0.155 were examined. Results show that the highest characteristics temperatures occur not at the lattice-match composition y = 0 but for slightly tensile strained wells with y = 0.025 and y = 0.05. A strained layer laser model was employed to explain this qualitative behavior