Thermal stability of cobalt and nickel silicides on crystalline Si (c-Si) and amorphous Si (a-Si) has been investigated. We have found that CoSi<sub>2</sub> is thermally stable on a-Si and c-Si substrates up to 950°C for 30 min. NiSi is stable and shows low resistivity on c-Si at around 700°C for 30 min, but is unstable on a-Si substrate even after annealing at 400°C. © 1998 Elsevier Science Ltd. All rights reserved
This is the first report of a technique for inserting a thin Zr interlayer into a nickel film to imp...
A novel silicide technology to improve the thermal stability of the conventional Ni silicide is stud...
We investigated the formation and thermal stability of Co-silicide films using Co-Ta alloy films on ...
CoSi sub(2) is stable on amorphous Si and crystalline Si substrates and it shows low resistivity aft...
Thermal stability of nickel monosilicide (NiSi) on single crystalline silicon (c-Si), poly-crystalli...
Nickel monosilicide (NiSi) has been well recognized as a promising silicide for future ULSI devices....
The cobalt silicide/fine-grained polycrystalline silicon (poly-Si) structure has been employed as ga...
We investigated the solid state reaction of 30-nm and 100-nm-thick silicide layers on single-crystal...
The formation and degradation of NiSi in the presence of Co and Fe alloying elements have been inves...
In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The sa...
In view of their potential application in ULSI technology, nickel silicide films were formed on undo...
The thermal stability of Ni silicide, in comparison to the more conventionally used Co silicide, is ...
In this work, we found that very low resistivity NiSi can be thermally stable and is independent on ...
A silicon-on-metal-on-insulator substrate, consisting of a top Si layer, a buried COSi2 layer and a ...
The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstru...
This is the first report of a technique for inserting a thin Zr interlayer into a nickel film to imp...
A novel silicide technology to improve the thermal stability of the conventional Ni silicide is stud...
We investigated the formation and thermal stability of Co-silicide films using Co-Ta alloy films on ...
CoSi sub(2) is stable on amorphous Si and crystalline Si substrates and it shows low resistivity aft...
Thermal stability of nickel monosilicide (NiSi) on single crystalline silicon (c-Si), poly-crystalli...
Nickel monosilicide (NiSi) has been well recognized as a promising silicide for future ULSI devices....
The cobalt silicide/fine-grained polycrystalline silicon (poly-Si) structure has been employed as ga...
We investigated the solid state reaction of 30-nm and 100-nm-thick silicide layers on single-crystal...
The formation and degradation of NiSi in the presence of Co and Fe alloying elements have been inves...
In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The sa...
In view of their potential application in ULSI technology, nickel silicide films were formed on undo...
The thermal stability of Ni silicide, in comparison to the more conventionally used Co silicide, is ...
In this work, we found that very low resistivity NiSi can be thermally stable and is independent on ...
A silicon-on-metal-on-insulator substrate, consisting of a top Si layer, a buried COSi2 layer and a ...
The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstru...
This is the first report of a technique for inserting a thin Zr interlayer into a nickel film to imp...
A novel silicide technology to improve the thermal stability of the conventional Ni silicide is stud...
We investigated the formation and thermal stability of Co-silicide films using Co-Ta alloy films on ...