BaPbO3 conductive coating layers on platinized Si substrate for the growth of PbZr1-xTixO3 thin films

Barium metaplumbate (BaPbO3, BPO) thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method and a rapid thermal annealing (RTA) process. X-ray diffraction (XRD) was used to characterize the crystalline structure of the resultant films. It was shown that the formation of perovskite BPO greatly depends on the lead concentration and the final annealing temperature. In terms of the semiquantitative energy dispersion spectrum (EDS) analysis, the ratio of Pb/Ba in the BPO ceramic films increases as the final heating temperature increases. Using BPO as buffer layers, PZT thin films with a pure perovskite structure were grown at a very low temperature of 500DGC by the sol-gel technique and the RTA process. The remanent polarization of Pt/PZT/BPO/Pt ferroelectric capacitors is about 17 *mC/cm2 at an applied voltage of 3 V