Characteristics of longitudinal optical phonon assisted quantum carrier capture process-temperature and bias dependence

The quantum carrier capture time in a quantum well laser is calculated as a function of temperature and bias current. The calculated results show good consistency with recent measurements on the small signal frequency response of a quantum well laser at cryogenic temperatures. This calculation reveals some of the characteristics of longitudinal optical phonon assisted quantum carrier capture phenomena in quantum well structures.© 1995 American Institute of Physics