We have successfully grown BiSb alloy thin films on CdTe(111)B over a wide range of Sb compositions using molecular beam epitaxy. Structural properties have been investigated using in situ reflection high-energy electron diffraction, x-ray diffraction, and atomic force microscopy. Adding Sb to Bi leads to a reduction of the lattice constant, poorer crystallinity, and a rougher surface morphology. (C) 1999 American Vacuum Society. [S0734-2101(99)04601-1]
In this paper, I present recent progresses on epitaxial growth and material characterizations of nov...
abstract: III-V-bismide semiconductor alloys are a class of materials with applications in the mid a...
iwan form ne 2 s su rfa nd bst linearity [4]. The physical properties of crystalline Bi vary with qu...
Epitaxial Bi/Sb superlattices have been grown by molecular beam epitaxy on CdTe(111)B substrates. Th...
Bi thin films have been grown on InSb(1 1 1)A/B substrates using molecular beam epitaxy. We have obs...
Rhombohedral Bi thin films have been grown on zinc-blende (111), (211) and (100) CdTe substrates by ...
Epitaxial growth of GaSb 1–x Bi x thin films on GaSb (100) substrates were studied by varying V/III ...
Sb2Te3 and Bi2Te3 thin films were grown at room temperature on SiO2 and BaF2 substrates using molecu...
Sb2Te3 and Bi2Te3 thin films were grown at roomtemperature on SiO2 and BaF2 substrates using molecul...
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Succes...
Nano-alloyed p-type Sb 2Te 3 and n-type Bi 2Te 3 thin films were grown on SiO 2/Si and BaF 2 substra...
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Succes...
AlSbBi thin films with a Bi content up to 15% have been successfully grown by molecular beam epitaxy...
Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorpo...
Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorpo...
In this paper, I present recent progresses on epitaxial growth and material characterizations of nov...
abstract: III-V-bismide semiconductor alloys are a class of materials with applications in the mid a...
iwan form ne 2 s su rfa nd bst linearity [4]. The physical properties of crystalline Bi vary with qu...
Epitaxial Bi/Sb superlattices have been grown by molecular beam epitaxy on CdTe(111)B substrates. Th...
Bi thin films have been grown on InSb(1 1 1)A/B substrates using molecular beam epitaxy. We have obs...
Rhombohedral Bi thin films have been grown on zinc-blende (111), (211) and (100) CdTe substrates by ...
Epitaxial growth of GaSb 1–x Bi x thin films on GaSb (100) substrates were studied by varying V/III ...
Sb2Te3 and Bi2Te3 thin films were grown at room temperature on SiO2 and BaF2 substrates using molecu...
Sb2Te3 and Bi2Te3 thin films were grown at roomtemperature on SiO2 and BaF2 substrates using molecul...
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Succes...
Nano-alloyed p-type Sb 2Te 3 and n-type Bi 2Te 3 thin films were grown on SiO 2/Si and BaF 2 substra...
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Succes...
AlSbBi thin films with a Bi content up to 15% have been successfully grown by molecular beam epitaxy...
Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorpo...
Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorpo...
In this paper, I present recent progresses on epitaxial growth and material characterizations of nov...
abstract: III-V-bismide semiconductor alloys are a class of materials with applications in the mid a...
iwan form ne 2 s su rfa nd bst linearity [4]. The physical properties of crystalline Bi vary with qu...