Novel self-protected MOS-gated thyristor

A novel device called self-protected MOS gated thyristor is reported for the first time. This device is parasitic latch-up free, and exhibits the characteristic of output current decrease, instead of current saturation or increase at higher anode voltage. Therefore, the novel device possesses satisfactory forward biased safe operating area. The device protected point can be adjusted by customer through external applied input resistance and this improves the flexibilit dramatically. In addition, the temperature coefficients of current and voltage at protected point are negative. Such a feature makes the device self-protected more efficiently at high temperature