Double-gate SOI MOSFET Fabrication from Bulk Silicon Wafer

Fabrication of double-gate metal oxide semiconductor field effect transistors (MOSFET) based on silicon on insulator technology (SOI) was performed using silicon wafers. A silicon film recrystallized from amorphous silicon was used for the fabrication. Results from device performance indicated that the film was equivalent to single crystal SOI film with high defect density