A two-stage power amplifier operated at 2.4 GHz is designed and fabricated in a standard 0.35-mum CMOS technology. A common-gate class-E power amplifier is employed for low-supply voltage operation without degrading the power-added efficiency (PAE). A preamplifter with positive feedback configuration is used to drive the common-gate output stage. The amplifier delivers 18-dB output power with 33\% PAE under a 1-V supply voltage
A CMOS low-power baseband analog front end (BAFE) for an integrated bluetooth receiver is presented....
We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungr...
Un amplificador de potencia de dos etapas de clase AB en cascada operando a 2.4Ghz fue diseñado para...
A two-stage power amplifier operated at 2.4GHz has been designed and fabricated in a standard 0.35mu...
With recent advance in CMOS processes, many essential building blocks for wireless transceivers, suc...
In recent RF front-end IC designs, CMOS technology has gained much more popularity for its low cost ...
The main purpose of this paper is to present the design of a class E power amplifier for Bluetooth C...
Abstract — This paper presents the design of two low-voltage differential class-E power amplifiers ...
A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technol...
In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 pow...
Abstract In this paper, we report an RF power amplifier design in digital CMOS technology for the Cl...
This thesis researches the design of transceiver front-end RF amplifiers for Bluetooth applications ...
Modern fully integrated transceivers architectures, require circuits with low area, low cost, low p...
A 1-V 2.4-GHz CMOS RF Receiver front-end, which includes an LNA, a mixer and a VCO, is designed for ...
Abstract—This paper describes the design of a differential class-E PA for Bluetooth applications in ...
A CMOS low-power baseband analog front end (BAFE) for an integrated bluetooth receiver is presented....
We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungr...
Un amplificador de potencia de dos etapas de clase AB en cascada operando a 2.4Ghz fue diseñado para...
A two-stage power amplifier operated at 2.4GHz has been designed and fabricated in a standard 0.35mu...
With recent advance in CMOS processes, many essential building blocks for wireless transceivers, suc...
In recent RF front-end IC designs, CMOS technology has gained much more popularity for its low cost ...
The main purpose of this paper is to present the design of a class E power amplifier for Bluetooth C...
Abstract — This paper presents the design of two low-voltage differential class-E power amplifiers ...
A fully integrated differential class-AB power amplifier has been designed in a 0.25 um CMOS technol...
In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 pow...
Abstract In this paper, we report an RF power amplifier design in digital CMOS technology for the Cl...
This thesis researches the design of transceiver front-end RF amplifiers for Bluetooth applications ...
Modern fully integrated transceivers architectures, require circuits with low area, low cost, low p...
A 1-V 2.4-GHz CMOS RF Receiver front-end, which includes an LNA, a mixer and a VCO, is designed for ...
Abstract—This paper describes the design of a differential class-E PA for Bluetooth applications in ...
A CMOS low-power baseband analog front end (BAFE) for an integrated bluetooth receiver is presented....
We propose a new transmitter architecture for ultra-low power radios in which the most energy-hungr...
Un amplificador de potencia de dos etapas de clase AB en cascada operando a 2.4Ghz fue diseñado para...
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