Fast reverse recovery body diode in high-voltage VDMOSFET using cell-distributed Schottky contacts
- Cheng, X
- Sin, JKO
- Kang, BW
- Feng, CG
- Wu, Y
- Liu, XM
DOIAbstract
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the VDMOSFET. Experimental results from the fabricated samples show a 50\% decrease in the reverse recovery charge and a 60\% increase in the softness factor of the body diode in 500 V/2 A VDMOSFETs
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