Preparation of si nanocrystallites by phase separation of si-rich silicon nitride

Silicon nanocrystallites embedded in silicon nitride were prepared by high-temperature annealing of silicon-rich silicon nitride (SRN) via the phase separation reaction. The silicon rich nitride films were deposited by low-pressure chemical-vapor deposition (LPCVD) and high temperature annealing. At sufficiently high temperatures, nanocrystallites are formed as a result of phase separation effect. The chemical composition and bonding structure of the silicon oxide and nitride based nanocrystals were analyzed using X-ray photoelectron spectroscopy (XPS). Photoluminescence (PL) measurements were also conducted to probe the luminescent properties of the SRN films. © 2008 IEEE